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IXFN26N120P

Part Number	IXFN26N120P
Manufacturer	IXYS Corporation
Description	Polar Power MOSFET
Published	May 13, 2011
Detailed Description	PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VG...
Datasheet	IXFN26N120P PDF File

Overview

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md 1.
6mm (0.
062 in.
) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA www.
DataSheet4U.
net IXFN26N120P VDSS ID25 RDS(on) trr = = ≤ ≤ 1200V 23A 460mΩ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1200 1200 ± 30 ± 40 23 60 13 1.
5 20 695 -55 .
.
.
+150 150 -55 .
.
.
+150 300 2500 3000 1.
5/13 1.
3/11.
5 30 V V V V A A A J V/ns W °C °C °C °C V~ V~ Nm/lb.
in.
Nm/lb.
in...

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IXFN26N120P Polar Power MOSFET - IXYS Corporation

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