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IXFN420N10T

Part Number	IXFN420N10T
Manufacturer	IXYS Corporation
Description	GigaMOS Trench HiperFET Power MOSFET
Published	May 13, 2011
Detailed Description	Advance Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast ...
Datasheet	IXFN420N10T PDF File

Overview

Advance Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN420N10T RDS(on) ≤ ≤ trr VDSS ID25 = = 100V 420A 2.
3mΩ 140ns miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md www.
DataSheet4U.
net Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 100 100 ±20 ±30 420 200 1000 100 5 20 1070 -55 .
.
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+175 175 -55 .
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+175 V V V V A A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.
in.
Nm/lb.
in.
g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal.
Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 ...

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IXFN420N10T GigaMOS Trench HiperFET Power MOSFET - IXYS Corporation

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