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IXFP7N80PM

IXYS Corporation
Part Number IXFP7N80PM
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 13, 2011
Detailed Description PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Di...
Datasheet PDF File IXFP7N80PM PDF File

IXFP7N80PM
IXFP7N80PM

Overview
PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP7N80PM VDSS ID25 RDS(on) trr = = ≤ ≤ 800 3.
5 1.
44 250 V A Ω ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD www.
DataSheet4U.
net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 800 800 ± 30 ± 40 3.
5 18 4 20 300 10 50 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C OVERMOLDED TO-220 (IXTP.
.
.
M) OUTLINE G Isolated Tab D S G = Gate S = Source D = Drain Features z 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque 300 260 z z z Md Weight 1.
13/10 Nm/lb.
in.
3.
0 g z Plastic overmolded tab for electrical isolation Fast intrinsic diode International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 1 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V VGS = 10 V, ID = 3.
5 A Note 1 TJ = 125°C Characteristic Values Min.
Typ.
Max.
800 3.
0 5.
0 ±100 25 500 1.
44 V V nA μA μA Ω Advantages z z z Easy to mount Space savings High power density © 2006 IXYS All rights reserved DS99598E(08/06) IXFP7N80PM Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min.
Typ.
Max.
5 9.
5 1890 VGS = 0 V, VDS = 25 V, f = 1 MHz 133 13 28 VGS = 10 V, VDS = 0.
5 VDSS, ID = 4 A RG = 10 Ω (External) 32 55 24 32 VGS= 10 V, VDS = 0.
5 VDSS, ID = 6 A 12 9 S pF pF pF ns ns ns ns nC nC nC 2.
5 °C/W Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 1 2 3 ISOLATED TO-220 (IXFP.
.
.
M) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC VDS= ...


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