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IXFP102N15T

IXYS Corporation
Part Number IXFP102N15T
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 13, 2011
Detailed Description Trench Gate Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated IXFA102N15T IXFH102N15T IXFP102N15T VDS...
Datasheet PDF File IXFP102N15T PDF File

IXFP102N15T
IXFP102N15T

Overview
Trench Gate Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated IXFA102N15T IXFH102N15T IXFP102N15T VDSS ID25 RDS(on) trr = 150V = 102A ≤ 18mΩ ≤ 120ns TO-263 (IXFA) G S (TAB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC www.
DataSheet4U.
net Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 175°C TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 102 75 300 51 750 20 455 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V V A A A A mJ V/ns W °C °C °C °C °C Nmlb.
in.
N/lb.
g g g TO-220 (IXFP) G D S (TAB) TO-247 (IXFH) G D (TAB) S D = Drain TAB = Drain G = Gate S = Source 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10 seconds Mounting Torque Mounting Force TO-263 TO-220 TO-247 300 260 Features z z (TO-220 & TO-247) 1.
13 / 10 (TO-263) 10.
.
65 / 2.
2.
.
14.
6 2.
5 3.
0 6.
0 Internatio...


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