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IXFP3N50PM

IXYS Corporation
Part Number IXFP3N50PM
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 13, 2011
Detailed Description Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mod...
Datasheet PDF File IXFP3N50PM PDF File

IXFP3N50PM
IXFP3N50PM

Overview
Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP 3N50PM VDSS ID25 RDS(on) trr = = ≤ ≤ 500 2.
7 2.
0 200 V A Ω ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD www.
DataSheet4U.
net Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 50 Ω TC = 25° C Maximum Ratings 500 500 ± 30 ± 40 2.
7 8 3 10 100 10 36 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C OVERMOLDED TO-220 (IXTP.
.
.
M) OUTLINE G Isolated Tab D S G = Gate S = Source D = Drain Features l 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque 300 260 l l l Md Weight 1.
13/10 Nm/lb.
in.
4 g l Plastic overmolded tab for electrical isolation Fast intrinsic diode International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 1.
8 A Note 1 TJ = 125° C Characteristic Values Min.
Typ.
Max.
500 3.
0 5.
5 ±100 5 200 2.
0 V V nA µA µA Ω Advantages l l l Easy to mount Space savings High power density © 2006 IXYS All rights reserved DS99509E(04/06) IXFP 3N50PM Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min.
Typ.
Max.
3.
5 409 VGS = 0 V, VDS = 25 V, f = 1 MHz 48 6.
1 25 VGS = 10 V, VDS = 0.
5 VDSS, ID = 3.
6 A RG = 50 Ω (External) 28 63 29 9.
3 VGS= 10 V, VDS = 0.
5 VDSS, ID = 1.
8 3.
3 3.
4 3.
5 S pF pF pF ns ns ns ns nC nC nC ° C/W Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 1 2 3 ISOLATED TO-220 (IXTP.
.
.
M) gfs Ciss Coss Crs...


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