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IXFP4N100PM

IXYS Corporation
Part Number IXFP4N100PM
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 13, 2011
Detailed Description Advance Technical Information PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic...
Datasheet PDF File IXFP4N100PM PDF File

IXFP4N100PM
IXFP4N100PM

Overview
Advance Technical Information PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP4N100PM VDSS ID25 RDS(on) = 1000V = 2.
5A ≤ 3.
3Ω OVERMOLDED Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight www.
DataSheet4U.
net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C Maximum Ratings 1000 1000 ± 20 ± 30 2.
5 8.
0 4.
0 200 10 57 - 55 .
.
.
+150 150 - 55 .
.
.
+150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.
in.
g Advantages z z z G DS D = Drain G = Gate S = Source Featur...


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