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IXFH5N100P

IXYS Corporation
Part Number IXFH5N100P
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 13, 2011
Detailed Description Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intri...
Datasheet PDF File IXFH5N100P PDF File

IXFH5N100P
IXFH5N100P

Overview
Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA5N100P IXFH5N100P IXFP5N100P RDS(on) VDSS ID25 = 1000V = 5A ≤ 2.
8Ω TO-263 (IXFA) G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight www.
DataSheet4U.
net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ±30 ±40 5 10 5 300 10 250 -55 .
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+150 150 -55 .
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+150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.
in.
g g g G = Gate S = Source G G D S S (TAB...


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