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3VD156600YL

Part Number	3VD156600YL
Manufacturer	Silan Microelectronics
Description	HIGH VOLTAGE MOSFET CHIPS
Published	May 19, 2011
Detailed Description	3VD156600YL 3VD156600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD156600YL is a High voltage N-Channel enhancement mode...
Datasheet	3VD156600YL PDF File

Overview

3VD156600YL 3VD156600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD156600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology.
¾ Advanced termination scheme to provide enhanced voltage-blocking capability.
¾ Avalanche Energy Specified.
¾ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ¾ The chips may packaged in TO-92DT-3L type and the typical equivalent product is 1N60SS.
¾ The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
¾ Die size: 1.
6mm*1.
54mm.
¾ Chip Thickness: 300±20μm.
CHIP TOPOGRAPHY ¾ Top metal: Al, Backside Metal : ...

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3VD156600YL HIGH VOLTAGE MOSFET CHIPS - Silan Microelectronics

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