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IXGP30N60C3D4

IXYS Corporation
Part Number IXGP30N60C3D4
Manufacturer IXYS Corporation
Description GenX3 600V IGBT
Published May 23, 2011
Detailed Description Preliminary Technical Information GenX3TM 600V IGBT With Diode High Speed PT IGBTs for 40-100kHz switching IXGA30N60C3...
Datasheet PDF File IXGP30N60C3D4 PDF File

IXGP30N60C3D4
IXGP30N60C3D4

Overview
Preliminary Technical Information GenX3TM 600V IGBT With Diode High Speed PT IGBTs for 40-100kHz switching IXGA30N60C3D4 IXGP30N60C3D4 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 30A 3.
0V 47ns TO-263 (IXGA) Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load @ ≤ 600V TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 60 30 150 ICM = 60 220 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A W °C °C °C °C °C Nm/lb.
in.
g g Optimized for low switching losses Square RBSOA Anti-parallel ultra fast diode International standard packages Advantages High power density Low gate drive requirement Features G C C(TAB) E G E C(TAB) TO-220 (IXGP) G = Gate E = Emitter C = Collector TAB = Collector 1.
6mm (0.
062 in.
) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO...


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