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SPP21N50C3

Infineon Technologies
Part Number SPP21N50C3
Manufacturer Infineon Technologies
Description Power Transistor
Published May 27, 2011
Detailed Description SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • World...
Datasheet PDF File SPP21N50C3 PDF File

SPP21N50C3
SPP21N50C3


Overview
SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220FP P G-TO262 560 0.
19 21 PG-TO220 V Ω A Type SPP21N50C3 SPI21N50C3 SPA21N50C3 Package PG-TO220 PG-TO262 PG-TO220FP Ordering Code Q67040-S4565 Q67040-S4564 SP000216364 Marking 21N50C3 21N50C3 21N50C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C www.
DataSheet4U.
net Symbol SPP_I ID 21 13.
1 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt page 1 Value SPA Unit A 211) 13.
11) 63 690 1 21 ±20 ±30 34.
5 15 W °C V/ns 2009-12-22 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=10A, VDD=50V 63 690 1 21 ±20 ±30 208 A mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=21A, VDD=50V Avalanche current, repeti...



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