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4GBJ806

HY ELECTRONIC
Part Number 4GBJ806
Manufacturer HY ELECTRONIC
Description (4GBJ8005 - 4GBJ810) GLASS PASSIVATED BRIDGE RECTIFIERS
Published May 30, 2011
Detailed Description 4GBJ8005 thru 4GBJ810 GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES ●Rating to 1000V PRV ● Ideal for printed circuit board...
Datasheet PDF File 4GBJ806 PDF File

4GBJ806
4GBJ806


Overview
4GBJ8005 thru 4GBJ810 GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES ●Rating to 1000V PRV ● Ideal for printed circuit board ●Low forward voltage drop,high current capability ●Reliable low cost construction utilizing molded plastic ? .
134(3.
4) ? .
122(3.
1) .
995(25.
3) .
983(24.
7) REVERSE VOLTAGE FORWARD CURRENT 4GBJ - 50 to 1000Volts - 8.
0 Amperes .
043(1.
1) .
035(0.
9) .
074(1.
9) .
059(1.
5) .
708(18.
0) .
669(17.
0) .
150(3.
8) .
130(3.
3) .
057(1.
45) .
041(1.
05) .
083(2.
1) .
069(1.
7) + ~ ~ - .
157 (4.
0) classification 94V-0 .
602(15.
3) .
578(14.
7) ●The plastic material has U/L flammability .
118(3.
0)*45° .
114(2.
9) .
098(2.
5) .
303(7.
7) .
303(7.
7) .
303(7.
7) SPACING .
287(7.
3) .
287(7.
3) .
287(7.
3) .
031(0.
8) .
023(0.
6) Dimensions in inches and (milimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward (with heatsink Note 2) Rectified Current @ TC=100℃ (without heatsink) Peak Forward Surge Current 8.
3ms Single Half Sine-Wave Super Imposed on Rated Load (JEDEC Method) Maximum Forward Voltage at 4.
0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage I2t Rating for Fusing (t<8.
3ms) Typical Junction Capacitance Per Element (Note1) Typical Thermal Resistance Operating Temperature Range Storage Temperature Range @ TJ=25℃ @ TJ=125℃ SYMBOL VRRM VRMS VDC I(AV) 4GBJ 8005 50 35 50 4GBJ 801 100 70 100 4GBJ 802 200 140 200 4GBJ 804 400 280 400 8.
0 2.
9 160 1.
1 10.
0 500 120 55 1.
8 -55 to +150 -55 to +150 4GBJ 806 600 420 600 4GBJ 808 800 560 800 4GBJ 810 1000 700 1000 UNIT V V V A IFSM VF IR I2t CJ RθJC TJ TSTG A2s pF ℃/W ℃ ℃ NOTES: 1.
Measured at 1.
0MHz and applied reverse voltage of 4.
0V DC.
2.
Device mounted on 75mm*75mm*1.
6mm Cu plate heatsink.
www.
DataSheet4U.
net ~ 490 ~ ? .
134(3.
...



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