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IXFB50N80Q2

Part Number	IXFB50N80Q2
Manufacturer	IXYS Corporation
Description	HiPerFET Power MOSFETs Q-Class
Published	May 30, 2011
Detailed Description	HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low tr...
Datasheet	IXFB50N80Q2 PDF File

Overview

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C IXFB50N80Q2 VDSS ID25 RDS(on) trr = = ≤ ≤ 800V 50A 160mΩ 300ns PLUS264 Maximum Ratings 800 800 ± 30 ± 40 50 200 50 5 20 1135 -55 .
.
.
+150 150 -55 .
.
.
+150 300 260 10 V V V V A A A J V/ns W °C °C °C °C °C g Features Double Metal Process for...

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IXFB50N80Q2 HiPerFET Power MOSFETs Q-Class - IXYS Corporation

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