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IXFB100N50P

IXYS Corporation
Part Number IXFB100N50P
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 30, 2011
Detailed Description PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB 100N50P VDSS ID25...
Datasheet PDF File IXFB100N50P PDF File

IXFB100N50P
IXFB100N50P

Overview
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB 100N50P VDSS ID25 RDS(on) trr = 500 V = 100 A ≤ 49 mΩ ≤ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω TC = 25° C Maximum Ratings 500 500 ±30 ±40 100 75 250 100 100 5 20 1250 -55 .
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+150 150 -55 .
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+150 V V V V A A A A mJ J V/ns W °C °C °C °C °C N/lb g PLUS264TM (IXFB) G...


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