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IXFC14N60P

IXYS Corporation
Part Number IXFC14N60P
Manufacturer IXYS Corporation
Description PolarHV HiPerFET Power MOSFET
Published May 30, 2011
Detailed Description PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Int...
Datasheet PDF File IXFC14N60P PDF File

IXFC14N60P
IXFC14N60P

Overview
PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFC14N60P VDSS ID25 RDS(on) trr = = ≤ ≤ 600V 8A 630mΩ 200ns ISOPLUS 220TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight 1.
6mm (0.
062 in.
) from case for 10s Plastic body for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting force t = 1min t = 1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 600 600 ±30 ±40 8 42 14 900 10 125 -55 .
.
.
+150 150 -55 .
.
.
+150 300 260 2500 3000 11.
.
66 / 2.
5.
.
14.
6 2 V V V V A A A mJ V/ns W °C °C °C °C °C V~ V~ N/lb.
g Features UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Avanlache rated Fast intrinsic diode Advantages Easy t...


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