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IXFV14N80PS

IXYS Corporation
Part Number IXFV14N80PS
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 30, 2011
Detailed Description PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P...
Datasheet PDF File IXFV14N80PS PDF File

IXFV14N80PS
IXFV14N80PS

Overview
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS VDSS ID25 RDS(on) trr = 800 V = 14 A ≤ 720 mΩ ≤ 250 ms TO-247 (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maximum Ratings 800 800 ± 30 ± 40 14 40 7 30 500 10 400 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C PLUS220 (IXFV) G D (TAB) D (TAB) TO-3P (IXFQ) S TO-268 (IXFT) G S D (TAB) G D (TAB) 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque (TO-247, TO-3P) PLUS220, PLUS220 SMD TO-268, TO-3P TO-247 300 260 D S 1.
13/10 Nm/lb.
in.
2 5.
5 6 g g g PLUS220SMD (IXFV.
.
.
S) G S G = Gate S = So...


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