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IXFH23N80Q

Part Number	IXFH23N80Q
Manufacturer	IXYS Corporation
Description	HiPerFET Power MOSFETs Q-Class
Published	May 30, 2011
Detailed Description	HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGS...
Datasheet	IXFH23N80Q PDF File

Overview

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight 1.
6 mm (0.
063 in) from case for 10 s Mounting torque Mounting Force TO-247 TO-268 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFH23N80Q IXFT23N80Q VDSS = 800 V = 23 A ID25 RDS(on) = 0.
42 Ω trr ≤ 250 ns Maximum Ratings 800 800 ± 30 ± 40 23 92 23 45 1.
5 5 500 -55 .
.
.
+150 150 -55 .
.
.
+150 300 V V V V A A A mJ J...

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IXFH23N80Q HiPerFET Power MOSFETs Q-Class - IXYS Corporation

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