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IXFT23N80Q

IXYS Corporation
Part Number IXFT23N80Q
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs Q-Class
Published May 30, 2011
Detailed Description HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGS...
Datasheet PDF File IXFT23N80Q PDF File

IXFT23N80Q
IXFT23N80Q

Overview
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight 1.
6 mm (0.
063 in) from case for 10 s Mounting torque Mounting Force TO-247 TO-268 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFH23N80Q IXFT23N80Q VDSS = 800 V = 23 A ID25 RDS(on) = 0.
42 Ω trr ≤ 250 ns Maximum Ratings 800 800 ± 30 ± 40 23 92 23 45 1.
5 5 500 -55 .
.
.
+150 150 -55 .
.
.
+150 300 V V V V A A A mJ J V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S G = Gate S = Source TAB = Drain Features z z z 1.
13/10 Nm/lb.
in.
z 20.
.
.
120/4.
5.
.
.
27 N/lb 6 4 g g z z IXYS advanced low Qg process International standard packages Epoxy meets UL 94 V-0 flammability classification Low RDS (on) low Qg Avalanche energy and current rated Fast intrinsic rectifier Advantages z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
800 2.
5 4.
5 ±100 TJ = 25°C TJ = 125°C 25 1 0.
42 V V nA µA mA Ω z Easy to mount Space savings High power density VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 3 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.
5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved www.
DataSheet4U.
net DS99060A(02/04) IXFH23N80Q IXFT23N80Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
18 26 4900 VGS = 0 V, VDS = 25 V, f = 1 MHz 500 130 28 VGS = 10 V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RG = 1.
5 Ω (External), 27 74 14 130 VGS = 10 V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 26 55 0.
25 TO-247 0.
25 S 1 2 3 TO-247 AD (IXFH) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK V...


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