DatasheetsPDF.com

AD003B-9-TO5I

Part Number	AD003B-9-TO5I
Manufacturer	Pacific Silicon Sensor
Description	Pacific Silicon Sensor
Published	Jun 2, 2011
Detailed Description	Pacific Silicon Sensor Series 9 Data Sheet Part Description AD003B-9-TO5i Order # 06-087 www.DataSheet4U.com ACTIVE AR...
Datasheet	AD003B-9-TO5I PDF File

Overview

Pacific Silicon Sensor Series 9 Data Sheet Part Description AD003B-9-TO5i Order # 06-087 www.
DataSheet4U.
com ACTIVE AREA: 0.
33 mm 2 (1.
10 mm X 0.
30 mm ) 1.
90 Ø0.
45 3 PL ANODE PIN 1 CATHODE PIN 2 Ø9.
1 Ø6.
35 Ø8.
13 120° VIEWING ANGLE Ø5.
08 PIN CIRCLE 3.
2 13.
2 MIN 3 PL CASE PIN 3 FRONTSIDE VIEW BACKSIDE VIEW H FEATURES • • • • 1.
10 mm X 0.
30 mm active area Low slope multiplication curve High speed, low noise NIR enhanced DESCRIPTION 0.
33 mm High Speed, Low Noise Avalanche Photodiode with N on P construction.
Hermetically packaged in a TO-5 with a clear borosilicate glass window cap.
2 APPLICATIONS S C PLI A NT OM • High speed optical communications • Laser range finder • Medical equipment • High speed photometry ABSOLUTE MAXIMUM RATING SYMBOL PARAMETER MIN TSTG TOP TSOLDERING Storage Temp Operating Temp Soldering Temp 10 seconds Electrical Power Dissipation @ 22°C Optical Peak Value, once for 1 second Continuous Optical Operation Pulsed Signal Input 50 µs “on” / 1 ms “off” SPECTRAL RESPONSE at M = 100 MAX +100 +70 +260 UNITS °C °C RESPONSIVITY (A/W) 70 60 50 40 30 20 10 0 400 500 600 700 800 900 1000 1100 -60 -20 °C mW mW µA mA - 100 200 250 1 IPH (DC) IPH (AC) WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS @ 22 °C SYMBOL CHARACTERISTIC TEST CONDITIONS ID C VBR MIN TYP MAX Ro UNITS Dark Current M = 100* --2.
0 6.
0 nA Capacitance M = 100* --2.
0 --pF Breakdown Voltage ID = 2 µA 120 200 --V Temperature Coefficient of VBR --1.
55 --V/K --55 60 A/W Responsivity M = 100; = 0 V; λ = 905 nm Bandwidth -3dB --0.
35 --GHz ∆ƒ3dB Rise Time M = 100 --1.
0 --ns tr Optimum Gain 50 60 ------“Excess Noise” factor M = 100 2.
5 ----“Excess Noise” index M = 100 0.
2 1/2 ----Noise Current M = 100 0.
75 pA/Hz --Max Gain 200 ---14 1/2 ----NEP Noise Equivalent Power 3.
0 X 10 M = 100; λ = 905 nm W/Hz * Measurement conditions: Setup of photo current 10 nA at M = 1 and irradiated by a 880 nm, 80 nm bandwidth LED.
Increase the photo current up to 1 µA, (M = 100) by interna...

Similar Datasheet

AD003B-9-TO5I Pacific Silicon Sensor - Pacific Silicon Sensor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)