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BSC252N10NSFG

Infineon Technologies
Part Number BSC252N10NSFG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Jun 7, 2011
Detailed Description BSC252N10NSF G OptiMOS™2 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized f...
Datasheet PDF File BSC252N10NSFG PDF File

BSC252N10NSFG
BSC252N10NSFG

Overview
BSC252N10NSF G OptiMOS™2 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID PG-TDSON-8 100 25.
2 40 V mΩ A www.
DataSheet4U.
com • Low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Type BSC252N10NSF G Package PG-TDSON-8 Marking 252N10NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A...


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