DatasheetsPDF.com

2N4416

Micross
Part Number 2N4416
Manufacturer Micross
Description N-CHANNEL JFET
Published Jun 9, 2011
Detailed Description 2N4416 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N4416 The 2N4416 is a N-Channel high frequency JF...
Datasheet PDF File 2N4416 PDF File

2N4416
2N4416


Overview
2N4416 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N4416 The 2N4416 is a N-Channel high frequency JFET amplifier The 2N4416 N-channel JFET is designed to provide high-performance amplification at high frequencies.
The hermetically sealed TO-18 package is well suited for military applications and harsh environment applications.
FEATURES  DIRECT REPLACEMENT FOR SILICONIX 2N4416  EXCEPTIONAL GAIN (400 MHz)  VERY LOW NOISE FIGURE (400 MHz)  VERY LOW DISTORTION  HIGH AC/DC SWITCH OFF‐ISOLATION  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   MAXIMUM CURRENT Gate Current (Note 1)  MAXIMUM VOLTAGES  Gate to Drain or Gate to Source      10dB (min)  4dB (max)  2N4416 Benefits: ƒ ƒ ƒ ƒ ƒ Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification www.
DataSheet4U.
com ‐65°C to +200°C  ‐55°C to +135°C  300mW  10mA  ‐30V      2N4416 Applications: ƒ ƒ ƒ ƒ High-Frequency Amplifier / Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches   2N4416 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.
  MAX  UNITS  BVGSS  Gate to Source Breakdown Voltage  ‐30  ‐‐  ‐‐  V  VGS(off)  Gate to Source Cutoff Voltage  ‐‐  ‐‐  ‐6  V  IDSS  Gate to Source Saturation Current  5  ‐‐  15  mA  IGSS  Gate Leakage Current  ‐‐  ‐‐  ‐0.
1  nA  gfs  Forward Transconductance  4500  ‐‐  7500  µS  gos  Output Conductance  ‐‐  ‐‐  50  µS  Ciss  Input Capacitance2  ‐‐  ‐‐  0.
8  pF  Crss  Reverse Transfer Capacitance2  ‐‐  ‐‐  4  pF  Coss  Output Capacitance2  ‐‐  ‐‐  2  pF  en  Equivalent Input Noise Voltage  ‐‐  6  ‐‐  nV/√Hz   2N4416 HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  SYMBOL  CHARACTERISTIC  100 Mhz  400 Mhz  UNITS  MIN  MAX  MIN  MAX  gIss  bIss  goss  boss  Gfs  Gps  N...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)