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2N4401 Datasheet PDF


Part Number 2N4401
Manufacturer NXP
Title NPN switching transistor
Description NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: 2N4403. 1 handbook, halfpage 2N4401 PINNING PIN 1 2 3 collector base ...
Features
• High current (max. 600 mA)
• Low voltage (max. 40 V). APPLICATIONS
• Industrial and consumer switching applications. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: 2N4403. 1 handbook, halfpage 2N4401 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 ...

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2N4400 : 2N4400 / MMBT4400 Discrete POWER & Signal Technologies 2N4400 MMBT4400 C E C BE TO-92 SOT-23 Mark: 83 B NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 60 6.0 1.0 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semi.

2N4400 : 2N4400 2N4401 Unit Marking Code 2N4400 2N4401 VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC PD PD RθJA Collector Current Continuous Power Dissipation at TA=25°C Derate above 25°C Power Dissipation at TC=25°C Derate above 25°C Thermal Resistance Junction to Ambient Air 600 mA 625 mW 5.0 mW/° C 1.5 W 12 mW/° C 200 ° C/W Conditions RθJC TJ ,TSTG Thermal Resistance Junction to Case Operation and Storage Junction Temperature Range 83.3 -55 to +150 ° C/W °C TAITRON COMPONENTS INCORPORATED www.taitroncomponent.

2N4400 : 2N4400 & 2N4401 Silicon NPN Transistor General Purpose TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 40V Collector−Base Voltage, VCBO . 60V Emitter−Base Voltage, VEBO . 6V Continuous Collector Current, IC . . 600mA Total DDeveircaeteDAis.

2N4400 : : SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N4400 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES . Low Leakage Current : IcEV=100nA (Max -)' lBEV=-100nA(Max.) @ V CE=35V, VBE=-0.4V . Excellent DC Current Gain Linearity . Low Saturation Voltage : VcE(sat)=0-4V(Max.) @ Ic=150mA, lB=15mA . Low Collector Output Capacitance : C b=6.5pF(Max.) @ V CB=5V . Complementary to 2N4402 Unit in mm 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC % Collector-Base Voltage * Collector-Emitter Voltage •X- Emitter-Base Voltage * Collector Current Base Current * Collector Power Dissipation (Ta=25°C) Derate Linearly 25°C SYMBOL VCBO VCEO VEBO ic IB PC RATING .

2N4400 : Elektronische Bauelemente 2N4400 0.6 A, 60 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  General Purpose Amplifier Transistor TO-92 Collector   Base  Emitter GH J AD B K E CF  Emitter  Base  Collector REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal resistance, ju.

2N4400 : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:Type number Maximum Ratings* Symbol Rating VCEO VCBO VEBO IC TJ TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Thermal Charac.

2N4400 : Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-92 Plastic Package 2N4400, 2N4401 2N4402, 2N4403 2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Switching Applications 123 1 = EMITTER 2 = BASE 3 = COLLECTOR EBC DIM MIN MAX A 4,32 5,33 B 4,45 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 1,40 H 1,14 1,53 K 12,70 – L 1.982 2.082 ALL DIMENSIONS IN M.M. ABSOLUTE MAXIMM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation At Ta=25 ºC Derate Above 25 ºC Power Dissipation.

2N4400 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon COLLECTOR 3 2N4400 2N4401* *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 40 60 6.0 600 625 5.0 Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction to Ambient RqJA 200 Thermal Resistance, Junction to Case RqJC 83.3 EL.

2N4400 : The CENTRAL SEMICONDUCTOR 2N4400 and 2N4401 are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N4402 and 2N4403. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg 60 40 6.0 600 625 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICEV VCE=35V, VEB=0.4V BVCBO IC=0.1mA BVCEO IC=1.0mA BVEBO IE=0.1mA VCE(SAT) IC=150mA, IB=15mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=.

2N4401 : This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. November 2014 EBC TO-92 Figure 1. 2N4401 Device Package C SOT-23 Mark:2X E B Figure 2. MMBT4401 Device Package Ordering Information Part Number 2N4401BU 2N4401TF 2N4401TFR 2N4401TA 2N4401TAR MMBT4401 Marking 2N4401 2N4401 2N4401 2N4401 2N4401 2X Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L SOT-23 3L Packing Method Bulk Tape and Reel Tape and Reel Ammo Ammo Tape and Reel © 2001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 Rev. 1.1.0 www.fairchildsemi.com 2N4401 / MMBT4401 — NPN General-Purpose Amplifier Absolute Maximum Ratings(1),(2) Stresses exc.

2N4401 : ADVANCED INFORMATION ADVANCED INFORMATION 2N4401 SMALL SIGNAL TRANSISTORS (NPN) TO-92 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) FEATURES ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ As complementary type, the PNP transistor 2N4403 is recommended. ¨ On special request, this transistor is also manufactured in the pin configuration TO-18. ¨ This transistor is also available in the SOT-23 case with the type designation MMBT4401 max. Æ 0.022 (0.55) 0.098 (2.5) E C B MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND THERMAL CHARACTERISTICS Ratings at 25¡C ambien.

2N4401 : Features • Halogen Free Available Upon Request By Adding Suffix "-HF" • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25°C Unless Otherwise Specified • Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 200℃/W Junction to Ambient Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Symbol VCBO VCEO VEBO IC PD Rating 60 40 6 600 625 Unit V V V mA mW Marking: Type Number Internal Structure C B 1.EMITTER 2.BASE E 3.COLLECTOR 2N4401 NP.

2N4401 : UMT4401 / SST4401 / MMST4401 / 2N4401 Transistors NPN Medium Power Transistor (Switching) UMT4401 / SST4401 / MMST4401 / 2N4401 !External dimensions (Units : mm) !Features 1) BVCEO40V (IC=1mA) 2) Complements the UMT4403 / SST4403 / MMST4403 / PN4403. UMT4401 2.0±0.2 1.3±0.1 0.65 0.65 (1) (2) 0.2 0.9±0.1 0.7±0.1 1.25±0.1 2.1±0.1 0~0.1 (3) ROHM : UMT3 EIAJ : SC-70 0.3+0.1 0.15±0.05 −0 All terminals have the same dimensions 2.9±0.2 1.9±0.2 0.95 0.95 (1) (2) !Package, marking, and packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) UMT4401 UMT3 R2X T106 3000 SST4401 SST3 R2X T116 3000 MMST4401 SMT3 R2X T146 3000 2N4401 TO-92 T93 3000 SST4401 0.95.

2N4401 : 2N4400 & 2N4401 Silicon NPN Transistor General Purpose TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 40V Collector−Base Voltage, VCBO . 60V Emitter−Base Voltage, VEBO . 6V Continuous Collector Current, IC . . 600mA Total DDeveircaeteDAis.

2N4401 : 2N4401 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM: 0.6 W(Tamb=25OC) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGES ( @ TA = 25OC unless otherwise noted) RATINGS .

2N4401 : 2N4401 & 2N4403 General Purpose Switching Transistors Features: • NPN/PNP Silicon Planar Epitaxial Transistors. • General purpose Switching Applications. • 2N 4401 Type NPN. • 2N 4403 Type PNP. 2N4401 NPN 2N4403 PNP TO-92 Dimensions A B C D E F G H K L Minimum 4.32 4.45 3.18 0.41 0.35 1.14 12.70 1.982 Maximum 5.33 5.20 4.19 0.55 0.50 5° 1.40 1.53 2.082 Dimensions : Millimetres Pin Configuration 1 = Emitter 2 = Base 3 = Collector Page 1 31/05/05 V1.0 2N4401 & 2N4403 General Purpose Switching Transistors Absolute Maximum Ratings Parameters Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate above 25°.




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