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2N4401

NXP
Part Number 2N4401
Manufacturer NXP
Description NPN switching transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4401 NPN switching transistor Product specification Superse...
Datasheet PDF File 2N4401 PDF File

2N4401
2N4401

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4401 NPN switching transistor Product specification Supersedes data of 1997 May 07 1999 Apr 23 Philips Semiconductors Product specification NPN switching transistor FEATURES • High current (max.
600 mA) • Low voltage (max.
40 V).
APPLICATIONS • Industrial and consumer switching applications.
DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package.
PNP complement: 2N4403.
1 handbook, halfpage 2N4401 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 3 1 2 3 MAM279 Fig.
1 Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN.
MAX.
60 40 6 600 800 200 630 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 23 2 Philips Semiconductors Product specification NPN switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 60 V IC = 0; VEB = 6 V VCE = 1 V; see Fig.
2 IC = 0.
1 mA IC = 1 mA IC = 10 mA IC = 150 mA; note 1 IC = 500 mA; VCE = 2 V; note 1 VCEsat VBEsat Cc Ce fT ton td tr toff ts tf Note 1.
Pulse test: tp ≤ 300 µs; δ ≤ 0.
02.
collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 150 mA;...


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