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IT120

Micross
Part Number IT120
Manufacturer Micross
Description General Purpose
Published Jun 10, 2011
Detailed Description IT120 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems replaces discontinued Intersil IT120 The IT120 is a monolithic pair...
Datasheet PDF File IT120 PDF File

IT120
IT120

Overview
IT120 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems replaces discontinued Intersil IT120 The IT120 is a monolithic pair of NPN transistors mounted in a single P-DIP package.
The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.
The IT120 is a direct replacement for discontinued Intersil IT120.
The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation.
(See Packaging Information).
IT120 Features: ƒ High hfe at low current ƒ Tight matching Tight VBE tracking ƒ ƒ Low Output Capacitance FEATURES  Direct Replacement for INTERSIL IT120  HIGH  hFE @ LOW CURRENT  OUTPUT CAPACITANCE  VBE tracking ABSOLUTE MAXIMUM RATINGS 1  @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation (One side)  Continuous Power Dissipation (Both sides)  Linear Derating factor (One side)  Linear Derating factor (Both sides)  Maximum Currents  Collector Current    MIN  ‐‐  ‐‐  ‐‐  TYP  ‐‐  ‐‐  ‐‐  MAX  2  5  5  UNITS  mV  µV/°C  nA  ≥ 200 @ 10µA  ≤ 2.
0pF  ≤ 5.
0µV°C  ‐65°C to +200°C  ‐55°C to +150°C  250mW  500mW  2.
3mW/°C  4.
3mW/°C  10mA    CONDITIONS  IC = 10µA, VCE = 5V  IC = 10µA, VCE = 5V  TA = ‐55°C to +125°C  IC = 10µA, VCE = 5V  www.
DataSheet4U.
com MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)  SYMBOL  CHARACTERISTIC  |VBE1 – VBE2 |  Base Emitter Voltage Differential  ∆|(VBE1 – VBE2)| / ∆T  Base Emitter Voltage Differential    Change with Temperature  |IB1 – IB2 |  Base Current Differential    ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.
  BVCBO  Collector to Base Voltage  45  BVCEO  Collector to Emitter Voltage  45  BVEBO  Emitter‐Base Breakdown Voltage  6.
2  BVCCO  Collector to Collector Voltage  60  hFE  DC Current Gain  200  225  VCE(SAT)  Collector Saturation Voltage  ‐‐  IEBO  Emitter Cutoff Current  ‐‐  IC...


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