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LS302

Micross
Part Number LS302
Manufacturer Micross
Description Super Beta
Published Jun 11, 2011
Detailed Description LS302 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS302 is a monolith...
Datasheet PDF File LS302 PDF File

LS302
LS302

Overview
LS302 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS302 is a monolithic pair of high voltage SuperBeta NPN transistors mounted in a single P-DIP package.
The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.
The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation.
(See Packaging Information).
LS302 Features: ƒ ƒ FEATURES  HIGH  GAIN   LOW OUTPUT CAPACITANCE  TIGHT VBE MATCHING  HIGH ft  ABSOLUTE MAXIMUM RATINGS 1  @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation (One side)  Continuous Power Dissipation (Both sides)  Linear Derating factor (One side)  Linear Derating factor (Both sides)  Maximum Currents  Collector Current    MIN  ‐‐  ‐‐  ‐‐  TYP  0.
2  1  1  MAX  1  5  5  hFE ≥ 1000 @ 1µA TYP.
  COBO ≤ 2.
0pF  |VBE1 – VBE2 |= 0.
2mV TYP.
  100MHz  ‐65°C to +200°C  ‐55°C to +150°C  250mW  500mW  2.
3mW/°C  4.
3mW/°C  5mA    UNITS  mV  µV/°C  nA  %  CONDITIONS  IC = 10µA, VCE = 5V  IC = 10µA, VCE = 5V  TA = ‐55°C to +125°C  IC = 10µA, VCE = 5V  IC = 10µA, VCE = 5V  www.
DataSheet4U.
com ƒ Very high gain Tight matching Low Output Capacitance MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)  SYMBOL  CHARACTERISTIC  |VBE1 – VBE2 |  Base Emitter Voltage Differential  ∆|(VBE1 – VBE2)| / ∆T  Base Emitter Voltage Differential    Change with Temperature  |IB1 – IB2 |  Base Current Differential  hFE1 /hFE2  DC Current Gain Differential    ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.
  BVCBO  Collector to Base Voltage  35  BVCEO  Collector to Emitter Voltage  35  BVEBO  Emitter‐Base Breakdown Voltage  6.
2  BVCCO  Collector to Collector Voltage  100    ‐‐    DC Current Gain  hFE  1000  ‐‐  VCE(SAT)  Collector Saturation Voltage  ‐‐  IEBO  Emitter Cutof...


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