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LS3250SB

Micross
Part Number LS3250SB
Manufacturer Micross
Description General Purpose
Published Jun 12, 2011
Detailed Description LS3250SB NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SB is a NPN transistor mounted in a single TO-92 packag...
Datasheet PDF File LS3250SB PDF File

LS3250SB
LS3250SB


Overview
LS3250SB NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SB is a NPN transistor mounted in a single TO-92 package.
The 3 Pin TO-92 provides ease of manufacturing, and the symmetrical pinout prevents improper orientation.
(See Packaging Information).
LS3250SB Features: ƒ Low Output Capacitance FEATURES  LOW CAPACITANCE   ABSOLUTE MAXIMUM RATINGS 1  @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   Maximum Currents  Collector Current  Maximum Voltages  Collector to Collector Voltage    ≤ 2pF  ‐65°C to +150°C  ‐55°C to +150°C  TBD  50mA  80V    www.
DataSheet4U.
com   ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.
  BVCBO  Collector to Base Voltage  40  BVCEO  Collector to Emitter Voltage  40  BVEBO2  Emitter‐Base Breakdown Voltage  6.
2    100    DC Current Gain  hFE  80  80  VCE(SAT)  Collector Saturation Voltage  ‐‐  IEBO  Emitter Cutoff Current  ‐‐  ICBO  Collector Cutoff Current  ‐‐  COBO  Output Capacitance  ‐‐  fT  Current Gain Bandwidth Product  ‐‐  NF  Narrow Band Noise Figure  ‐‐  Click To Buy C B E TYP.
  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  MAX.
  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  0.
25  0.
2  0.
2  2  600  3  UNITS  V  V  V        V  nA  nA  pF  MHz  dB  CONDITIONS  IC = 10mA, IE = 0  IC = 10µA, IB = 0  IE = 10µA, IC = 0  IC = 10µA, VCE = 5V  IC = 100µA, VCE = 5V  IC = 1mA, VCE = 5V  IC = 100mA, IB = 10mA  IC = 0A, VCB = 3V  IE = 0A, VCB = 20V  IE = 0A, VCB = 10V  IC = 1mA, VCE = 5V  IC = 100µA,  VCE = 5V, BW=200Hz, RB= 10Ω,   f = 1KHz  Notes:  1.
 Absolute Maximum ratings are limiting values above which serviceability may be impaired 2.
 The reverse base‐to‐emitter voltage must never exceed 6.
2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
      T0-92 (Bottom View)     Available Packages: LS3250SB in TO-92 LS3250SB available as bare die Please contact Micross for full packa...



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