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LS3N165

Micross
Part Number LS3N165
Manufacturer Micross
Description Amplifier
Published Jun 13, 2011
Detailed Description LS3N165 P-CHANNEL MOSFET The LS3N165 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES  DIRECT REPLACEMEN...
Datasheet PDF File LS3N165 PDF File

LS3N165
LS3N165

Overview
LS3N165 P-CHANNEL MOSFET The LS3N165 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES  DIRECT REPLACEMENT FOR INTERSIL LS3N165  ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted)  Maximum Temperatures  The hermetically sealed TO-78 package is well suited Storage Temperature  ‐65°C to +200°C  for high reliability and harsh environment applications.
Operating Junction Temperature  ‐55°C to +150°C  Lead Temperature (Soldering, 10 sec.
)  +300°C  (See Packaging Information).
Maximum Power Dissipation  Continuous Power Dissipation (one side)  300mW  LS3N165 Features: Total Derating above 25°C 4.
2 mW/°C  MAXIMUM CURRENT ƒ Very high Input Impedance Drain Current  50mA  ƒ Low Capacitance MAXIMUM VOLTAGES  ƒ High Gain ƒ High Gate Breakdown Voltage Drain to Gate or Drain to Source2  ‐40V  ƒ Low Threshold Voltage Peak Gate to Source3 ±125V  Gate‐Gate Voltage  ±80V  LS3N165 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.
  MAX  UNITS...


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