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LSJ108

Micross
Part Number LSJ108
Manufacturer Micross
Description Switching
Published Jun 14, 2011
Detailed Description LSJ108 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J108 This n-channel JFET is optimised for low nois...
Datasheet PDF File LSJ108 PDF File

LSJ108
LSJ108

Overview
LSJ108 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J108 This n-channel JFET is optimised for low noise high performance switching.
The part is particularly suitable for use in low noise audio amplifiers.
The SOT-23 package is well suited for cost sensitive applications and mass production.
(See Packaging Information).
FEATURES  DIRECT REPLACEMENT FOR SILICONIX J108  LOW ON RESISTANCE  rDS(on) ≤ 8Ω  FAST SWITCHING  t(on) ≤ 4ns  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  ‐55°C to +150°C  LSJ108 Benefits: Operating Junction Temperature  ‐55°C to +150°C  ƒ Low On Resistance Maximum Power Dissipation  ƒ Low insertion loss Continuous Power Dissipation   350mW  ƒ Low Noise MAXIMUM CURRENT LSJ108 Applications: Gate Current (Note 1)  50mA  ƒ Analog Switches MAXIMUM VOLTAGES  ƒ Commutators Gate to Drain Voltage  VGDS = ‐25V  ƒ Choppers Gate to Source Voltage  VGSS = ‐25V      LSJ108 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.
  MAX  UNITS  CONDITIONS  BVGSS  Gate to Source Breakdown Voltage  ‐25  ‐‐  ‐‐    IG = 1µA,   VDS = 0V    VGS(off)  Gate to Source Cutoff Voltage  ‐3  ‐‐  ‐10  VDS = 5V, ID = 1µA  V  VGS(F)  Gate to Source Forward Voltage  ‐‐  0.
7  ‐‐  IG = 1mA,   VDS = 0V  IDSS  Drain to Source Saturation Current (Note 2)  80  ‐‐  ‐‐  mA  VDS = 15V, VGS = 0V  IGSS  Gate Reverse Current  ‐‐  ‐0.
01  ‐3    VGS = ‐15V,  VDS = 0V  nA  IG  Gate Operating Current  ‐‐  ‐0.
01  ‐‐  VDG = 10V,  ID = 10mA  ID(off)  Drain Cutoff Current  ‐‐   0.
02  3  VDS = 5V, VGS = ‐10V  rDS(on)  Drain to Source On Resistance  ‐‐  ‐‐  8  Ω  VGS = 0V,  VDS ≤ 0.
1V                LSJ108 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  SYMBOL  CHARACTERISTIC  MIN  TYP.
  MAX  UNITS  CONDITIONS  gfs  Forward Transconductance  ‐‐  17  ‐‐  mS  VDS = 5V,  ID = 10mA , f = 1kHz  gos  Output Conductance  ‐‐  0.
6  ‐‐  rDS(on)  Drain to Source On Resistance  ‐‐  ‐‐  8 ...


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