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LSJ309

Micross
Part Number LSJ309
Manufacturer Micross
Description Amplifier
Published Jun 14, 2011
Detailed Description LSJ309 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J309 The LSJ309 is a high frequency n-channel JFET...
Datasheet PDF File LSJ309 PDF File

LSJ309
LSJ309

Overview
LSJ309 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J309 The LSJ309 is a high frequency n-channel JFET offering a wide range and low noise performance.
The SOT-23 package is well suited for cost sensitive applications and mass production.
(See Packaging Information).
FEATURES  DIRECT REPLACEMENT FOR SILICONIX J309  OUTSTANDING HIGH FREQUENCY GAIN   LOW HIGH FREQUENCY NOISE  ABSOLUTE MAXIMUM RATINGS @ 25°C1   Gpg = 11.
5dB  NF = 2.
7dB  Maximum Temperatures  Storage Temperature  ‐55°C to +150°C  ƒ High Power Low Noise gain Operating Junction Temperature  ‐55°C to +135°C  ƒ Dynamic Range greater than 100dB Maximum Power Dissipation  ƒ Easily matched to 75Ω input Continuous Power Dissipation   350mW  LSJ309 Applications: MAXIMUM CURRENT Gate Current  10mA  ƒ UHV / VHF Amplifiers MAXIMUM VOLTAGES  ƒ Mixers Gate to Drain Voltage or  Gate to Source Voltage   ‐25V  ƒ Oscillators         LSJ309 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.
  MAX  UNIT  CONDITIONS  BVGSS  Gate to Source Breakdown Voltage  ‐25  ‐‐  ‐‐  V  VDS = 0V, IG = ‐1µA  VGS(F)  Gate to Source Forward Voltage  0.
7  ‐‐  1  VDS = 0V, IG = 10mA  VGS(off)  Gate to Source Cutoff Voltage  ‐1  ‐‐  ‐4  VDS = 10V,  ID = 1nA  IDSS  Drain to Source Saturation Current2  12  ‐‐  30  mA  VDS = 10V, VGS = 0V  IG  Gate Operating Current (Note 3)  ‐‐  ‐15  ‐‐  pA  VDG = 9V,  ID = 10mA  rDS(on)  Drain to Source On Resistance  ‐‐  35  ‐‐  Ω  VGS = 0V,  ID = 1mA                LSJ309 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  SYMBOL  CHARACTERISTIC  MIN  TYP.
  MAX  UNIT  CONDITIONS  gfs  Forward Transconductance  10  14  ‐‐  mS  VDS = 10V,   ID = 10mA , f = 1kHz  gos  Output Conductance  ‐‐  110  250  µS  Ciss  Input Capacitance  ‐‐  4  5  pF  VDS = 10V,   VGS = ‐10V , f = 1MHz   Crss  Reverse Transfer Capacitance  ‐‐  1.
9  2.
5  en  Equivalent Noise Voltage  6  ‐‐  ‐‐  nV/√Hz  VDS = 10V,    ID = 10mA ,  f = 100Hz                LSJ309 HI...


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