DatasheetsPDF.com

LSU425

Micross
Part Number LSU425
Manufacturer Micross
Description Low Leakage
Published Jun 15, 2011
Detailed Description LSU425 HIGH INPUT IMPEDANCE MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U425 The LSU4...
Datasheet PDF File LSU425 PDF File

LSU425
LSU425

Overview
LSU425 HIGH INPUT IMPEDANCE MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U425 The LSU425 is a high input impedance Monolithic Dual N-Channel JFET The LSU425 monolithic dual n-channel JFET is designed to provide very high input impedance for differential amplification and impedance matching.
Among its many unique features, this series offers operating gate current specified at -500 fA.
The LSU425 is a direct replacement for discontinued Siliconix U425.
The hermetically sealed TO-71 & TO-78 packages are well suited for military applications.
The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation.
(See Packaging Information).
FEATURES  HIGH INPUT IMPEDANCE  HIGH GAIN  LOW POWER OPERATION  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  IG = 0.
25pA MAX  gfs = 120µmho MIN  VGS(OFF) = 2V MAX  LSU425 Applications: ƒ ƒ ƒ Ultra Low Input Current Differential Amps High-Speed Comparators Impedance Converters Maximum Temperatures  Storage Temperature  ‐65°C to +150°C  Operating Junction Temperature  +150°C  Maximum Voltage and Current for Each Transistor – Note 1  ‐VGSS  Gate Voltage to Drain or Source  40V  ‐VDSO  Drain to Source Voltage  40V  ‐IG(f)  Gate Forward Current  10mA  Maximum Power Dissipation  Device Dissipation @ Free Air – Total                 400mW @ +125°C  MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL  CHARACTERISTICS  VALUE  UNITS  CONDITIONS  |∆V GS1‐2 /∆T|max.
  DRIFT VS.
  25  µV/°C  VDG=10V, ID=30µA  TEMPERATURE  TA=‐55°C to +125°C  | V GS1‐2 | max.
  OFFSET VOLTAGE  15  mV  VDG=10V, ID=30µA  TYP.
  60  ‐‐    ‐‐  200    ‐‐    ‐‐  ‐‐    ‐‐  ‐‐  ‐‐  ‐‐    ‐‐  0.
1    90  90    ‐‐  20  10    ‐‐  ‐‐  MAX.
  ‐‐  ‐‐    1500  350    1000    2.
0  1.
8    .
25  250  1.
0  1.
0    10  3.
0    ‐‐  ‐‐    1  70  ‐‐    3.
0  1.
5  UNITS  V  V    µmho  µmho    µA    V  V    pA  pA  pA  nA    µmho  µmho    dB  dB    dB  nV/√Hz      pF  pF  CONDITIONS  VDS =...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)