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LSU404

Micross
Part Number LSU404
Manufacturer Micross
Description Low Noise
Published Jun 20, 2011
Detailed Description LSU404 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U404 with LSU...
Datasheet PDF File LSU404 PDF File

LSU404
LSU404

Overview
LSU404 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U404 with LSU404 The U404/ LSU404 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The LSU404 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications.
The LSU404 features a 5mV offset and 10-µV/°C drift.
The LSU404 is a direct replacement for discontinued Siliconix U404.
The hermetically sealed TO-71 & TO-78 packages are well suited for military applications.
(See Packaging Information).
FEATURES  LOW DRIFT  LOW NOISE  LOW PINCHOFF  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  | V GS1‐2 / T| = 10µV/°C TYP.
  en = 6nV/Hz @ 10Hz TYP.
  Vp = 2.
5V TYP.
  U404 / LSU404 Applications: ƒ ƒ ƒ ƒ Wideband Differential Amps High-Speed,Temp-Compensated SingleEnded Input Amps High-Speed Comparators Impedance Converters and vibrations detectors.
Maximum Temperatures  Storage Temperature  ‐65°C to +150°C  Operating Junction Temperature  +150°C  Maximum Voltage and Current for Each Transistor – Note 1  ‐VGSS  Gate Voltage to Drain or Source  50V  ‐VDSO  Drain to Source Voltage  50V  ‐IG(f)  Gate Forward Current  10mA  Maximum Power Dissipation  Device Dissipation @ Free Air – Total                 300mW    MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL  CHARACTERISTICS  VALUE  UNITS  CONDITIONS  | V GS1‐2 / T| max.
  DRIFT VS.
  25  µV/°C  VDG=10V, ID=200µA  TEMPERATURE  TA=‐55°C to +125°C  | V GS1‐2 | max.
  OFFSET VOLTAGE  15  mV  VDG=10V, ID=200µA  TYP.
  60  ‐‐    ‐‐  ‐‐  0.
6    ‐‐  1    ‐‐  ‐‐    ‐4  ‐‐  ‐‐  5    ‐‐  0.
2    ‐‐    ‐‐  20    ‐‐  ‐‐  MAX.
  ‐‐  ‐‐    7000  2000  3    10  5    ‐2.
5  ‐2.
3    ‐15  ‐10  100  5    20  2    ‐‐    0.
5  ‐‐    8  1.
5  UNITS  V  V    µmho  µmho  %    mA  %    V  V    pA  nA  pA  pA    µmho  µmho    dB    dB  nV/√Hz    pF  pF  CONDITIONS  ...


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