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KSA614

Part Number	KSA614
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Jun 30, 2011
Detailed Description	isc Silicon PNP Power Transistor KSA614 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -55V (Min.) ·Col...
Datasheet	KSA614 PDF File

Overview

isc Silicon PNP Power Transistor KSA614 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -55V (Min.
) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.
5V (Max.
)@ IC= -1A ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency power amplifier ·Power regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -55 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A PC Collector Power Dissipation 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperat...

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