DatasheetsPDF.com

2SA1387

Part Number	2SA1387
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 1, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1387 DESCRIPTION ·High DC Current Gain- : hFE= 150(Min.) @ IC= -1A ·High Switching...
Datasheet	2SA1387 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1387 DESCRIPTION ·High DC Current Gain- : hFE= 150(Min.
) @ IC= -1A ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= -0.
4V(Max)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A ...

Similar Datasheet

2SA1300 TRANSISTOR - Toshiba Semiconductor
2SA1300 PNP EPITAXIAL SILICON TRANSISTOR - UTC
2SA1300 Plastic-Encapsulated Transistors - TRANSYS
2SA1300 PNP Transistor - Dc Components
2SA1300 PNP Transistor - SeCoS
2SA1300 PNP Silicon Epitaxial Planar Transistor - BLUECOLOUR
2SA1300 SILION PNP TRANSISTOR - LZG
2SA1301 Silicon PNP Transistor - Toshiba
2SA1301 SILICON POWER TRANSISTOR - SavantIC
2SA1301 Silicon PNP Power Transistor - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)