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2SA1355

Part Number	2SA1355
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 1, 2011
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·TO-220 package ·High DC Current Gain ·Low Saturation Voltage ·Minimum Lot...
Datasheet	2SA1355 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·TO-220 package ·High DC Current Gain ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -70 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A Total Power Dissipation @TC=25℃ 30 PT W Total Power Dissipation @Ta=25℃ 3.
0 TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ 2SA1355 isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sust...

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