DatasheetsPDF.com

2SA1332

Part Number	2SA1332
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 1, 2011
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robus...
Datasheet	2SA1332 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.
5 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -0.
15 A 2 W 20 150 ℃ -55~150 ℃ 2SA1332 isc website： www.
...

Similar Datasheet

2SA1300 TRANSISTOR - Toshiba Semiconductor
2SA1300 PNP EPITAXIAL SILICON TRANSISTOR - UTC
2SA1300 Plastic-Encapsulated Transistors - TRANSYS
2SA1300 PNP Transistor - Dc Components
2SA1300 PNP Transistor - SeCoS
2SA1300 PNP Silicon Epitaxial Planar Transistor - BLUECOLOUR
2SA1300 SILION PNP TRANSISTOR - LZG
2SA1301 Silicon PNP Transistor - Toshiba
2SA1301 SILICON POWER TRANSISTOR - SavantIC
2SA1301 Silicon PNP Power Transistor - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)