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2SA1304

Part Number	2SA1304
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 1, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1304 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Com...
Datasheet	2SA1304 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1304 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Complement to Type 2SC3296 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -150 V -150 V -5 V -1.
5 A -0.
5 A 2 W ...

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