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2SA1276

Part Number	2SA1276
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 1, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1276 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -30V(Min) ·Good ...
Datasheet	2SA1276 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1276 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -30V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3230 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IE Emitter Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：...

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