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2SA1217

Part Number	2SA1217
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 1, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1217 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -40V (Min) ·Good ...
Datasheet	2SA1217 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1217 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -40V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2877 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications.
·Suitable for output stage of 5 watts car radio and car stereo.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ...

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