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2SA1133A

Part Number	2SA1133A
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 4, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1133A DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V (Min) ·Lar...
Datasheet	2SA1133A PDF File

Overview

isc Silicon PNP Power Transistor 2SA1133A DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V (Min) ·Large Collector Power Dissipation ·Complement to Type 2SC2660A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A PC Collector Power Dissipation 30 W TJ Junction Temperature 150 ℃ Tstg Stora...

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