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2SA649

Part Number	2SA649
Manufacturer	Inchange Semiconductor
Description	PNP Transistor
Published	Jul 4, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA649 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Wid...
Datasheet	2SA649 PDF File

Overview

isc Silicon PNP Power Transistor 2SA649 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.
) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -11 A 80 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.
iscsemi.
com ...

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