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SEMIX453GAL12E4S

Semikron International
Part Number SEMIX453GAL12E4S
Manufacturer Semikron International
Description Trench IGBT
Published Jul 4, 2011
Detailed Description SEMiX453GAL12E4s SEMiX® 3s Trench IGBT Modules SEMiX453GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technol...
Datasheet PDF File SEMIX453GAL12E4S PDF File

SEMIX453GAL12E4S
SEMIX453GAL12E4S

Overview
SEMiX453GAL12E4s SEMiX® 3s Trench IGBT Modules SEMiX453GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no.
E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,0  RGoff,main = 1,0  RG,X = 2,2  RE,X = 0,5  Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Freewheeling diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C ...


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