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SEMIX653GD176HDC

Semikron International
Part Number SEMIX653GD176HDC
Manufacturer Semikron International
Description Trench IGBT
Published Jul 4, 2011
Detailed Description SEMiX653GD176HDc SEMiX® 33c Trench IGBT Modules SEMiX653GD176HDc Features • Homogeneous Si • Trench = Trenchgate techno...
Datasheet PDF File SEMIX653GD176HDC PDF File

SEMIX653GD176HDC
SEMIX653GD176HDC

Overview
SEMiX653GD176HDc SEMiX® 33c Trench IGBT Modules SEMiX653GD176HDc Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no.
E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V Tj = 125 °C Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM Tj IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf IC = 450 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C VGE=VCE, IC = 18 mA VGE = 0 V VCE = 1700 V Tj = 25 °C Tj = 125 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 ...


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