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2SB928

Panasonic Semiconductor
Part Number 2SB928
Manufacturer Panasonic Semiconductor
Description Power Transistors
Published Jul 7, 2011
Detailed Description Power Transistors 2SB0928 (2SB928), 2SB0928A (2SB928A) www.DataSheet4U.net Silicon PNP epitaxial planar type For Power...
Datasheet PDF File 2SB928 PDF File

2SB928
2SB928

Overview
Power Transistors 2SB0928 (2SB928), 2SB0928A (2SB928A) www.
DataSheet4U.
net Silicon PNP epitaxial planar type For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A ■ Features • High collector-emitter voltage (Base open) VCEO • High collector power dissipation PC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
Unit : mm 8.
5±0.
2 6.
0±0.
2 3.
4±0.
3 1.
0±0.
1 10.
0±0.
3 1.
5±0.
1 4.
4±0.
5 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage 2SB0928 (Base open) 2SB0928A VEBO IC ICP PC Ta = 25°C Tj Tstg Symbol VCBO VCEO Rating −200 −150 −180 −6 −2 −3 30 1.
3 150 −55 ∼ +150 °C °C V A A W Unit V V (6.
5) 1 : Base 2 : Collector 3 : Emitter N-G1 Package Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Note) Self-supported type package is also prepared ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SB0928 2SB0928A VEBO ICBO IEBO hFE1 * hFE2 Base-emitter voltage Collector-emitter saturation voltage Transition frequency VBE VCE(sat) fT IE = −500 µA, IC = 0 VCB = −200 V, IE = 0 VEB = −4 V, IC = 0 VCE = −10 V, IC = −150 mA VCE = −10 V, IC = −400 mA VCE = −10 V, IC = −400 mA IC = −500 mA, IB = −50 mA VCE = −10 V, IC = − 0.
5 A, f = 10 MHz 40 60 50 −1.
0 −1.
0 V V MHz Symbol VCBO VCEO Conditions IC = −500 µA, IE = 0 IC = −5 mA, IB = 0 Min −200 −150 −180 −6 −50 −50 240 V µA µA  Typ Max Unit V V Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank classification Rank hFE1 Q 60 to 140 P 100 to 240 Note)...


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