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2SB942

Panasonic Semiconductor
Part Number 2SB942
Manufacturer Panasonic Semiconductor
Description Power Transistors
Published Jul 7, 2011
Detailed Description Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-f...
Datasheet PDF File 2SB942 PDF File

2SB942
2SB942


Overview
Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) www.
DataSheet4U.
net Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A ■ Features 16.
7±0.
3 0.
7±0.
1 Unit: mm 10.
0±0.
2 5.
5±0.
2 4.
2±0.
2 4.
2±0.
2 2.
7±0.
2 • High forward current transfer ratio hFE which has satisfactory linearity • Large collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw 7.
5±0.
2 φ 3.
1±0.
1 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB0942 2SB0942A VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Symbol VCBO Rating −60 −80 −60 −80 −5 −4 −8 40 2 150 −55 to +150 °C °C V A A W 1 2 3 Unit V Solder Dip (4.
0) 14.
0±0.
5 1.
4±0.
1 1.
3±0.
2 0.
5+0.
2 –0.
1 0.
8±0.
1 Collector-emitter voltage 2SB0942 (Base open) 2SB0942A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature V 2.
54±0.
3 5.
08±0.
5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-emitter cutoff current (E-B short) 2SB0942 2SB0942A ICEO IEBO hFE1 * hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf 2SB0942 2SB0942A VBE ICES VCE = −4 V, IC = −3 A VCE = −60 V, VBE = 0 VCE = −80 V, VBE = 0 VCE = −30 V, IB = 0 VEB = −5 V, IC = 0 VCE = −4 V, IC = −1 A VCE = −4 V, IC = −3 A IC = −4 A, IB = − 0.
4 A VCE = −10 V, IC = − 0.
1 A, f = 10 MHz IC = −4 A, IB1 = − 0.
4 A, IB2 = 0.
4 A VCC = −50 V 30 0.
2 0.
5 0.
2 40 15 −1.
5 V MHz µs µs µs Symbol VCEO Conditions IC = −30 mA, IB = 0 Min −60 −80 −2 −400 −400 −700 −1 250 µA mA  V µA Typ Max Unit V Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Note) 1.
Measuring methods are based on JAPANES...



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