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IDB10S60C

Infineon Technologies
Part Number IDB10S60C
Manufacturer Infineon Technologies
Description 2nd Generation thinQ SiC Schottky Diode
Published Jul 7, 2011
Detailed Description IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide ...
Datasheet PDF File IDB10S60C PDF File

IDB10S60C
IDB10S60C


Overview
IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compliant www.
DataSheet4U.
net Product Summary V DC Qc IF 600 24 10 V nC A D2PAK • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) thinQ! 2G Diode designed for fast switching applications like: • CCM PFC • Motor Drives Type IDB10S60C Package D2PAK Marking D10S60C Pin 2 C Pin 3 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<135 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.
1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 10 15 76 Unit A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i²t value Repetitive peak reverse voltage Diode ruggedness dv/dt Power dissipation Operating and storage temperature Rev.
2.
1 I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg 32 350 29 600 A2s V V/ns W °C 2009-01-07 VR=0…480V T C=25 °C 50 83 -55 .
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175 page 1 IDB10S60C Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction - ambient SMD version, device on PCB, minimal Footprint SMD version, device on PCB, 6 cm2 cooling area3) reflow MSL1 1.
8 62 K/W Values typ.
max.
Unit - 35 - Soldering temperature, reflowsoldering @ 10sec.
T sold - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.
14 mA I F=10 A, T j=25 °C I F=10 A, T j=150 °C Reverse current IR V R=600 V, T j=25 °C 600 1.
5 1.
7 1.
4 1.
7 2.
1 140 µA V V R=600 V, T j=150 °C AC characteristic...


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