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IDH04S60C

Infineon Technologies
Part Number IDH04S60C
Manufacturer Infineon Technologies
Description Schottky Diode
Published Jul 7, 2011
Detailed Description IDH04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide •...
Datasheet PDF File IDH04S60C PDF File

IDH04S60C
IDH04S60C

Overview
IDH04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications www.
DataSheet4U.
net Product Summary V DC Qc IF 600 8 4 V nC A • Breakdown voltage tested at 5mA2) thinQ! 2G Diode specially designed for fast switching applications like: • CCM PFC • Motor Drives Type IDH04S60C Package PG-TO220-2 Marking D04S60C Pin 1 C Pin 2 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<140 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.
1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 4 5.
6 32 Unit A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque Soldering temperature, wavesoldering only allowed at leads Rev.
2.
0 T sold I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg 18 132 5.
1 600 A2s V V/ns W °C Mcm °C 2009-07-03 V R = 0….
480V T C=25 °C 50 42 -55 .
.
.
175 M3 and M3.
5 screws 1.
6mm (0.
063 in.
) from case for 10s page 1 60 260 IDH04S60C Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA leaded 3.
6 62 K/W Values typ.
max.
Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.
05 mA I F=4 A, T j=25 °C I F=4 A, T j=150 °C Reverse current IR V R=600 V, T j=25 °C V R=600 V, T j=150 °C AC characteristics Total capacitive charge Switching time3) Qc tc C V R=4...


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