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IDH05SG60C

Infineon Technologies
Part Number IDH05SG60C
Manufacturer Infineon Technologies
Description Schottky Diode
Published Jul 7, 2011
Detailed Description 3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching...
Datasheet PDF File IDH05SG60C PDF File

IDH05SG60C
IDH05SG60C

Overview
3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) • Optimized for high temperature operation • Lowest Figure of Merit QC/IF Product Summary VDC QC IF; TC< 130 °C IDH05SG60C 600 V 6 nC 5A thinQ! 3G Diode designed for fast switching applications like: • SMPS e.
g.
; CCM PFC • Motor Drives; Solar Applications; UPS Type IDH05SG60C Package PG-TO220-2 Marking D05G60C Pin 1 C Pin 2 A Maximum ratings Parameter Symbol Conditions Continuous forward current I F T C<130 °C Surge non-repetitive forward current, I F,SM sine halfwave T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms Non-repetitive peak forward current i ²t valu...


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