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IDH06SG60C

Infineon Technologies
Part Number IDH06SG60C
Manufacturer Infineon Technologies
Description Schottky Diode
Published Jul 7, 2011
Detailed Description 3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching...
Datasheet PDF File IDH06SG60C PDF File

IDH06SG60C
IDH06SG60C

Overview
3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) • Optimized for high temperature operation • Lowest Figure of Merit QC/IF Product Summary VDC QC IF; TC< 130 °C IDH06SG60C 600 V 8 nC 6A thinQ! 3G Diode designed for fast switching applications like: • SMPS e.
g.
; CCM PFC • Motor Drives; Solar Applications; UPS Type IDH06SG60C Package PG-TO220-2 Marking D06G60C Pin 1 C Pin 2 A Maximum ratings Parameter Symbol Conditions Continuous forward current IF T C<130 °C Surge non-repetitive forward current, I F,SM sine halfwave T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms Non-repetitive peak forward current i ²t value I F,max ∫i 2dt T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms Repetitive peak reverse voltage V RRM T j=25 °C Diode dv/dt ruggedness dv/ dt VR= 0….
480 V Power dissipation P tot T C=25 °C Operating and storage temperature Soldering temperature, wavesoldering only allowed at leads Mounting torque T j, T stg T sold 1.
6mm (0.
063 in.
) from case for 10s M3 and M3.
5 screws Value 6 32 23 190 5.
1 2.
5 600 50 71 -55 .
.
.
175 260 60 Unit A A2s V V/ns W °C Ncm Rev.
2.
4 page 1 2012-12-12 Parameter Symbol Conditions IDH06SG60C min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case R thJC - Thermal resistance, junction - ambient Thermal resistance, R thJA junction- ambient, - leaded Electrical characteristics, at T j=25 °C, unless otherwise specified - 2.
1 K/W - 62 Static characteristics DC blocking voltage Diode forward voltage Reverse current AC characteristics Total capacitive charge Switching time3) Total capacitance V DC I R=0.
05 mA, T j...


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