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IDH08S120

Infineon Technologies
Part Number IDH08S120
Manufacturer Infineon Technologies
Description Schottky Diode
Published Jul 7, 2011
Detailed Description IDH08S120 thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching beh...
Datasheet PDF File IDH08S120 PDF File

IDH08S120
IDH08S120


Overview
IDH08S120 thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Optimized for high temperature operation www.
DataSheet4U.
net • Lowest Figure Product Summary VDC QC IF; TC< 130 °C 1200 600 3.
2 27 7.
5 3 V nC A PG-TO220-2 of Merit QC/IF thinQ!TM Diode designed for fast switching applications like: • SMPS e.
g.
; CCM PFC • Motor Drives; Solar Applications; UPS Type IDH08S120 Package PG-TO220-2 Marking D08S120 Pin 1 C Pin 2 A Maximum ratings Parameter Continuous forward current Symbol Conditions IF T C<130 °C T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms V RRM dv/ dt P tot T j, T stg T sold 1.
6mm (0.
063 in.
) from case for 10s M3 and M3.
5 screws T j=25 °C VR= 0….
960 V T C=25 °C Value 7.
5 39 33 160 7 5 1200 50 100 -55 .
.
.
175 260 60 Mcm V V/ns W °C A2s Unit A Surge non-repetitive forward current, I F,SM sine halfwave Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Soldering temperature, wavesoldering only allowed at leads Mounting torque I F,max ∫i 2dt Rev.
2.
0 page 1 2010-04-20 IDH08S120 Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA Thermal resistance, junction- ambient, leaded 1,5 62 K/W Values typ.
max.
Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.
05 mA, T j=25 °C I F=7.
5 A, T j=25 °C I F=7.
5 A, T j=150 °C Reverse current IR V R=1200 V, T j=25 °C V R=1200 V, T j=150 °C AC characteristics Total capaciti...


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