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IDH09SG60C

Infineon Technologies
Part Number IDH09SG60C
Manufacturer Infineon Technologies
Description Schottky Diode
Published Jul 7, 2011
Detailed Description IDH09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide...
Datasheet PDF File IDH09SG60C PDF File

IDH09SG60C
IDH09SG60C

Overview
IDH09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) • Optimized for high temperature operation www.
DataSheet4U.
net • Lowest Figure Product Summary V DC QC I F; T C< 130 °C 600 15 9 V nC A of Merit QC/IF thinQ! 3G Diode designed for fast switching applications like: • SMPS e.
g.
; CCM PFC • Motor Drives; Solar Applications; UPS Type IDH09SG60C Package PG-TO220-2 Marking D09G60C Pin 1 C Pin 2 A Maximum ratings Parameter Continuous forward current Symbol Conditions IF T C<130 °C T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms V RRM dv/ dt P tot T j, T stg T sold 1.
6mm (0.
063 in.
) from case for 10s M3 and M3.
5 screws T j=25 °C VR= 0….
480 V T C=25 °C Value 9 49 42 400 12 9 600 50 115 -55 .
.
.
175 260 60 Ncm V V/ns W °C A2s Unit A Surge non-repetitive forward current, I F,SM sine halfwave Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Soldering temperature, wavesoldering only allowed at leads Mounting torque I F,max ∫i 2dt Rev.
2.
3 page 1 2009-08-04 IDH09SG60C Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA Thermal resistance, junction- ambient, leaded 1.
3 62 K/W Values typ.
max.
Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.
05 mA, T j=25 °C I F=9 A, T j=25 °C I F=9 A, T j=150 °C Reverse current IR V R=600 V, T j=25 °C V R=600 V, T j=150 °C AC character...


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