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IDT03S60C

Infineon Technologies
Part Number IDT03S60C
Manufacturer Infineon Technologies
Description Schottky Diode
Published Jul 7, 2011
Detailed Description IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide •...
Datasheet PDF File IDT03S60C PDF File

IDT03S60C
IDT03S60C

Overview
IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) • Optimized for high temperature operation www.
DataSheet4U.
net Product Summary V DC Qc IF 600 5 3 V nC A PG-TO220-2-2 thinQ! 2G Diode designed for fast switching applications like: • CCM PFC Type IDT03S60C Maximum ratings, Parameter Continuous forward current Symbol Conditions IF T C<120 °C T C<70 °C RMS forward current I F,RMS f =50 Hz T C=25 °C, t p=10 ms T C=150°C, t p=10 ms T j=150 °C, T C=100 °C, D =0.
1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms T C=150°C, t p=10 ms Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque V RRM dv/ dt P tot T j, T stg M3 and M3.
5 screws T j=25 °C V R = 0….
480V T C=25 °C Value 3 4.
5 4.
2 16 14 10.
5 115 1.
2 0.
96 600 50 25 -55 .
.
.
175 60 V V/ns W °C Mcm A2s Unit A Package PG-TO220-2-2 Marking D03S60C Pin 1 C Pin 2 A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i ²t value I F,RM I F,max ∫i 2dt Rev.
2.
0 page 1 2007-04-25 IDT03S60C Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at leads Electrical characteristics Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.
05mA, T j=25°C I F=3 A, T j=25 °C I F=3 A, T j=150 °C I F=4.
5 A, T j=25 °C I F=4.
5 A, T j=150 °C Reverse current IR V R=600 V, T j=25 °C V R=600 V, T j=150 °C AC characteristics Total capacitive charge Switching time3) Qc tc C V R=400 V,I F≤I F,max, di F/dt =200 A/µs, T j=150 °C V R=1 V, f = MHz V R=300 V, f =1 MHz V R=600 V, f =1 MHz 5...


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