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MRF6V13250HR3

Part Number	MRF6V13250HR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Jul 7, 2011
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 0, 6/2011 RF Power Field Effect Transistors ...
Datasheet	MRF6V13250HR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev.
0, 6/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at 1300 MHz.
These devices are suitable for use in pulsed and CW applications.
• Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (200 μsec, 10% Duty Cycle) Pout (W) 250 Peak f (MHz) 1300 Gps (dB) 22.
7 ηD (%) 57.
0 IRL (dB) --18 MRF6V13250HR3 MRF6V13250HSR3 1300 MHz, 250 W, 50 V LATERAL N-CHANNEL RF POWER MOSFETs • Typical Performance: VDD = 50 Volts, IDQ = 10 mA, TC = 25°C Signal Type CW Pout (W) 230 CW f (MHz) 1300 Gps (dB) 21.
0 ηD (%) 55.
0 IRL (dB) --17 at all Phase Angles www.
DataSheet4U.
net • Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz • 250 Watts Pulsed Peak Power, 10% Duty Cycle, 200 μsec • CW Capable CASE 465-06, STYLE 1 NI-780 MRF6V13250HR3 Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Characterized from 20 V to 50 V for Extended Power Range • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p.
12.
Table 1.
Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Total Device Dissipation @ TC = 25°C Derate above 25°C CASE 465A-06, STYLE 1 NI-780S MRF6V13250HSR3 Symbol VDSS VGS Tstg TC TJ PD Value --0.
5, +120 --6.
0, +10 -- 65 to +150 150 225 476 2.
38 Unit Vdc Vdc °C °C °C W W/°C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Pulsed: Case Temperature 65°C, 250 W Pulsed, 200 μsec Pulse Width, 10% Duty Cycle, 50 Vdc, IDQ = 100 mA, 1300 MHz CW: Case Temperatu...

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